Triple 3-input NAND Gates

Features • High Speed Operation: tpd = 10.5 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：84.24 Kbytes 页数：7 Pages

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TRIPLE 3-INPUT NAND GATE

文件：232.84 Kbytes 页数：9 Pages

STMICROELECTRONICS

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TRIPLE 3-INPUT NAND GATE

DESCRIPTION The M74HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits

文件：174.05 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The M74HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits

文件：174.05 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体