Triple 3-input NAND Gates

Features • High Speed Operation: tpd = 10.5 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：84.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

Triple 3-input NAND Gates

Features • High Speed Operation: tpd = 10.5 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：84.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS

Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS The IN74HC10A is identical in pinout to the LS/ALS10. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. • Outputs Directly Interface to CMOS, NMOS, and TTL • Ope

文件：177.86 Kbytes 页数：5 Pages

INTEGRAL

Integral Corp.

High Noise Immunity Characteristic of CMOS Devices

Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS The IN74HC10A is identical in pinout to the LS/ALS10. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. • Outputs Directly Interface to CMOS, NMOS, and TTL • Ope

文件：185.38 Kbytes 页数：5 Pages

IKSEMICON