丝印：HD5；Package：SC70(DCK)；LOW-POWER DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typical at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：1.44347 Mbytes 页数：24 Pages

TI

德州仪器

丝印：HD5；Package：SC70(DCK)；LOW-POWER DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typical at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：1.44347 Mbytes 页数：24 Pages

TI

德州仪器

丝印：HD500；Package：HTSOP-J8；1ch High-side switch

Features ■ Built-in overcurrent protection circuit ■ Built-in Thermal Shut Down(TSD) ■ Built-in Open Load Detection circuit(When Output is OFF) ■ Possibility to control directly from CMOS logic IC ■ Low standby current ■ Built-in Under Voltage Lock Out circuit ■ Built-in diagnostic(ST) out

文件：1.29489 Mbytes 页数：21 Pages

ROHM

罗姆

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA ● C-Band Terminal Construction

文件：32.369 Kbytes 页数：2 Pages

WTE

Won-Top Electronics