Hex Gate

Hex Gate The HD14572UB hex functional gate finds primary use where low power dissipation and/or high immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.

文件：65.83 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Hex Gate

HITACHI

日立

Hex Gate

Hex Gate The HD14572UB hex functional gate finds primary use where low power dissipation and/or high immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.

文件：65.83 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

文件：138.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

文件：138.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

文件：138.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体