Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

文件：249.93 Kbytes 页数：3 Pages

TTELEC

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

文件：796.63 Kbytes 页数：4 Pages

BOURNS

伯恩斯

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

文件：796.63 Kbytes 页数：4 Pages

BOURNS

伯恩斯

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

文件：249.93 Kbytes 页数：3 Pages

TTELEC

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

文件：249.93 Kbytes 页数：3 Pages

TTELEC