Extremely low switching loss

文件：206.44 Kbytes 页数：7 Pages

SEMIHOW

Extremely low switching loss

文件：295.33 Kbytes 页数：8 Pages

SEMIHOW

650V 0.38ohm N-channel MOSFET

文件：2.85431 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：353.67 Kbytes 页数：2 Pages

ISC

无锡固电