IQS360

12ChannelProjectedCapacitiveTouch&ProximityControllerwithTrackpadandKeypadCapability

IRF360

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-s

IRF360

RepetitiveAvalancheRatings

IRF360

N-ChannelMOSFETTransistor

DESCRIPTION •siliconGateforfastswitchingatelevate •rugged APPLICATIONS •suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.

IRF360

iscN-ChannelMOSFETTransistor

DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl

IRFI360

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRFI360

SimpleDriveRequirements

IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFM360

SimpleDriveRequirements

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.