首页 >HCS244DSLASHSAMPLE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | Intersil Intersil Corporation | Intersil | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | Hittite Hittite Microwave Corporation | Hittite | ||
ACTIVEBIASCONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISL |
23+ |
65480 |
询价 | ||||
INTERSL |
24+ |
AUSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
HARRIS |
23+ |
CDIP-20 |
7500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
ISL |
05+ |
原厂原装 |
4283 |
只做全新原装真实现货供应 |
询价 | ||
H |
24+ |
CDIP |
200 |
进口原装正品优势供应 |
询价 | ||
H |
24+ |
CDIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
HARRIS |
CDIP-20 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
H |
QQ咨询 |
CDIP |
63 |
全新原装 研究所指定供货商 |
询价 | ||
H |
2318+ |
CDIP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | ||
HARRIS/哈里斯 |
2402+ |
CDIP-20 |
8324 |
原装正品!实单价优! |
询价 |
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