Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fam

文件：179.28 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fam

文件：179.28 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Dual 4-Input NAND Gate

Description\nThe Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. • 3 Micron Radiation Hardened SOS CMOS\n• SEP Effective LET No Upsets: 100 MEV-cm2/mg\n• Dose Rate Survivability: 1 x 1012 RAD (Si)/s\n• Latch-Up Free Under Any Conditions\n• Significant Power Reduction Compared to LSTTL ICs\n• Input Logic Levels\n• Input Current Levels Ii ≤ 5µA at VOL, VOH;

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