Radiation Hardened Dual 4-Input AND Gate

Description The Intersil HCS21MS is a Radiation Hardened Dual Input AND Gate. A high on all inputs forces the output to a High state. The HCS21MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Famil

文件：184.59 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Dual 4-Input AND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：393.8 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Dual 4-Input AND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：393.8 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Dual 4-Input AND Gate

Description The Intersil HCS21MS is a Radiation Hardened Dual Input AND Gate. A high on all inputs forces the output to a High state. The HCS21MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Famil

文件：184.59 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Dual 4-Input AND Gate

Renesas

瑞萨