首页 >HCS138HMSR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFET ■Features ●VDS(V)=50V ●ID=200mA(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SOT-23Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible Applications ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-CHANNELMOSFETinaSOT-23PlasticPackage Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features LowRDS(on),ruggedandreliable,compactindustrystandardSOT-23surfacemountpackage. Applications Lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicatio | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:SS •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS50V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-ChannelMOS GENERALFEATURES ●VDS=50V,ID=0.22A ●RDS(ON) | E-CMOS 飞虹积体 | E-CMOS | ||
N-Channel50-V(D-S)MOSFET N-Channel50-V(D-S)MOSFET FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateR | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
50VN-ChannelMOSFET GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON) | Good-Ark Good-Ark | Good-Ark | ||
DirectLogic-LevelInterface:TTL/CMOS FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
N-CHANNELLOGICLEVELENHANCEMENTMODE | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELLOGICLEVELENHANCEMENTMODE ■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
50VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •RDS(ON),VGS@2.5V,IDS@100mA=6Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystem | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •50V,0.22A, RDS(ON)=3.5Ω@VGS=10V RDS(ON)=6.0Ω@VGS=4.5V •HighdensitycelldesignforlowRDS(ON). •RuggedandReliable. •SOT-23package | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DirectLogic-LevelInterface:TTL/CMOS GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,LTD. | SILIKRON | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS | Zetex Zetex Semiconductors | Zetex |
详细参数
- 型号：
HCS138HMSR
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISL |
05+ |
原厂原装 |
4285 |
只做全新原装真实现货供应 |
询价 | ||
H |
18 |
CSOP |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
H |
23+ |
CSOP |
66800 |
现货正品专供军研究院 |
询价 | ||
ISL |
23+ |
65480 |
询价 | ||||
H |
2318+ |
CSOP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | ||
H |
21+ROHS |
CDIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
H |
21+ |
CDIP |
645 |
航宇科工半导体-央企合格优秀供方! |
询价 | ||
H |
QQ咨询 |
CDIP |
70 |
全新原装 研究所指定供货商 |
询价 | ||
H |
0347+ |
CDIP |
1 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
Renesas Electronics |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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