首页 >HCPL-M453%23500>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GaAsDC-6GHzDPDTSwitch Description TheHWS453isaGaAsPHEMTMMICDPDTswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS453featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANsy | HWHexawave, Inc 汉威光电汉威光电股份有限公司 | HW | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.3A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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