INA181

INAx181-Q1Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°C≤TA≤125°C –HBMESDclassificationlevel2 –CDMESDclassificationlevelC6 •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Common-moderange(VCM):–

INAX181

INAx181Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1%gainerror(maximum

IS181

HIGHDENSITYMOUNTINGPHOTOTRANSISTOROPTICALLYCOUPLEDISOLATORS

DESCRIPTION TheIS181isanopticallycoupledisolatorconsistingofaninfraredlightemittingdiodeandNPNsiliconphototransistorinaspaceefficientdualinlineplasticpackage. FEATURES •MarkedasFPT1. •CurrentTransferRatioMIN.50 •IsolationVoltage(3.75kVRMS,5.3kVPK) •All

IS181D

HIGHDENSITYMOUNTINGPHOTOTRANSISTOROPTICALLYCOUPLEDISOLATORS

DESCRIPTION TheIS181isanopticallycoupledisolatorconsistingofaninfraredlightemittingdiodeandNPNsiliconphototransistorinaspaceefficientdualinlineplasticpackage. FEATURES •MarkedasFPT1. •CurrentTransferRatioMIN.50 •IsolationVoltage(3.75kVRMS,5.3kVPK) •All

ISCNL181D

iscN-ChannelMOSFETTransistor

JSE-181N-SMB

Absorbers

KDS181

SILICONEPITAXIALPLANARDIODE(ULTRAHIGHSPEEDSWITCHING)

ULTRAHIGHSPEEDSWITCHINGAPPLICATION. FEATURES •SmallPackage:SOT-23. •LowForwardVoltag:VF=0.92V(Typ.). •FastReverseRecoveryTime:trr=1.6ns(Typ.). •SmallTotalCapacitance:CT=2.2pF(Typ.).

KDS181

SOT-23PACKAGE

KM181K

R.F.MoldedChokes

[OhmiteMfg.Co.]

KSE181

LowPowerAudioAmplifierLowCurrentHighSpeedSwitchingApplications

NPNEpitaxialSiliconTransistor LowPowerAudioAmplifier LowCurrentHighSpeedSwitchingApplications