ENA0871A

NPNEpitaxialPlanarSiliconTransistorHigh-VoltageSwitchingApplications

Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight:0.9mm). •Highallowablepowerdissipation. Applications •DC

FTVS0871P

1800Wpeakpulsepower(8/20μs)

Features 1800Wpeakpulsepower(8/20μs) Lowleakage:nAlevel Lowoperatingvoltage:12V Ultralowclampingvoltage Onepowerlineprotects Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)76A

PG0871NL

SMTPowerInductors

TA0871A

SAWFilter1237.50MHz

TA0871A

SAWFilter1237.5MHz

TZ0871A

CrystalUnitSMD3.2x2.536.0000MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices

uClamp0871P.TNT

High-Power關Clamp짰1-LineSurgeProtection

uClamp0871P.TNT

High-PoweruClamp

XF0871P

TERMINALNUMBERSFORREFONLY