首页 >HC245(7.2)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Octal3-StateNoninvertingBusTransceiver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Description TheIntersilHCS245MSisaRadiationHardenedNon-InvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelogi | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Features •3MicronRadiationHardenedCMOSSOS •TotalDose200Kor1Mega-RAD(Si) •Latch-UpFreeUnderAnyConditions •Fanout(OverTemperatureRange) -BusDriverOutputs-15LSTTLLoads •MilitaryTemperatureRange:-55oCto+125oC •SignificantPowerReductionComparedtoLSTTLICs | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Description TheIntersilHCTS245MSisaRadiationHardenedNonInvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCTS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelog | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Description TheIntersilHCTS245MSisaRadiationHardenedNonInvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCTS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelog | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsofla | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Description TheIntersilHCTS245MSisaRadiationHardenedNonInvertingOctalBidirectionalBusTransceiver,Three-State,intendedfortwo-wayasynchronouscommunicationbetweendatabusses.TheHCTS245MSallowsdatatransmissionfromtheAbustotheBbusorfromtheBbustotheAbus.Thelog | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalBusTransceiver,Three-State,Non-Inverting Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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