首页 >HC165其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS165MSisaRadiationHardened8-BitParallel-In/Serial-OutShiftRegisterwithcomplementaryserial outputsandanasynchronousparallelloadinput. TheHCS165MSutilizesadvancedCMOS/SOStechnology toachievehigh-speedoperation.Thisdeviceisamemberof radia | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS165MSisaRadiationHardened8-BitParallel-In/Serial-OutShiftRegisterwithcomplementaryserial outputsandanasynchronousparallelloadinput. TheHCS165MSutilizesadvancedCMOS/SOStechnology toachievehigh-speedoperation.Thisdeviceisamemberof radia | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS165MSisaRadiationHardened8-BitParallel-In/Serial-OutShiftRegisterwithcomplementaryserial outputsandanasynchronousparallelloadinput. TheHCS165MSutilizesadvancedCMOS/SOStechnology toachievehigh-speedoperation.Thisdeviceisamemberof radia | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS165MSisaRadiationHardened8-BitParallel-In/Serial-OutShiftRegisterwithcomplementaryserial outputsandanasynchronousparallelloadinput. TheHCS165MSutilizesadvancedCMOS/SOStechnology toachievehigh-speedoperation.Thisdeviceisamemberof radia | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS165MSisaRadiationHardened8-BitParallel-In/Serial-OutShiftRegisterwithcomplementaryserial outputsandanasynchronousparallelloadinput. TheHCS165MSutilizesadvancedCMOS/SOStechnology toachievehigh-speedoperation.Thisdeviceisamemberof radia | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedInverting8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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