J327

TOSHIBAInsulatedGateBipolarTransistorSiliconNChannelIGBTCurrentResonanceInverterSwitchingApplication

CurrentResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.19µs(typ.)(IC=50A) •Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) •FRDincludedbetweenemitterandcollector •FourthgenerationIGBT •TO-3P(N)(Toshibapackagename)

J327

TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI)

J327

Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS??

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=242mΩ(max)(@VGS=-1.5V) RDS(ON)=170mΩ(max)(@VGS=-1.8V) RDS(ON)=125mΩ(max)(@VGS=-2.5V)

J327

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

JC327

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaTO-92;SOT54plasticpackage. NPNcomplement:JC337. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.driverandoutputstagesofaudioamplifiers.

LF327RW

WideInput,3WSMTSingle&DualOutputDC/DCConverters

LI-JETSON-KIT-IMX327CS

NvidiaJetsonTX1/TX2DeveloperKit

LI-JETSON-KIT-IMX327CS-D

NvidiaJetsonTX1/TX2DeveloperKit

LI-JETSON-KIT-IMX327CS-H

NvidiaJetsonTX1/TX2DeveloperKit

LI-JETSON-KIT-IMX327CS-T

NvidiaJetsonTX1/TX2DeveloperKit