HBT801-S技术资料参数贸易商首尔半导体-114ic电子网

首页 >HBT801-S>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
HBT801-S	文件：878.36 Kbytes Page：25 Pages	Applicable for automotive interior light 文件：878.36 Kbytes 页数：25 Pages	SEOUL 首尔半导体	SEOUL
HBWT801G-HG	文件：916.68 Kbytes Page：26 Pages	Applicable for automotive interior light 文件：916.68 Kbytes 页数：26 Pages	SEOUL 首尔半导体	SEOUL
HCT801	文件：249.93 Kbytes Page：3 Pages	Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) 文件：249.93 Kbytes 页数：3 Pages	TTELEC	TTELEC
HCT801TX	文件：249.93 Kbytes Page：3 Pages	Dual Enhancement Mode MOSFET Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on) 文件：249.93 Kbytes 页数：3 Pages	TTELEC	TTELEC

更多HBT801-S供应商更新时间2026-1-29 15:35:00