PNP EPITAXIAL PLANAR TRANSISTOR

Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features • High DC Current Gain: 100-600 at IC=100mA,VCE=1V • Complementary to HBC337

文件：37.31 Kbytes 页数：4 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description\nThis HBC327 is designed for driver and output-stages of audio amplifiers. • High DC Current Gain: 100-600 at IC=100mA,VCE=1V\n• Complementary to HBC337 ;

HSMC

华昕

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

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PHI

PHI

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：166.78 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time

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NTE