丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器