丝印：HB74；Package：SSOP；SNxAHCT74 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Convert a momentary switch to a toggle switch • Hold a signal duri

文件：2.86873 Mbytes 页数：43 Pages

TI

德州仪器

丝印：HB74；Package：TVSOP；SNxAHCT74 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Convert a momentary switch to a toggle switch • Hold a signal duri

文件：2.86873 Mbytes 页数：43 Pages

TI

德州仪器

丝印：HB74；Package：TSSOP；SNxAHCT74 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Convert a momentary switch to a toggle switch • Hold a signal duri

文件：2.86873 Mbytes 页数：43 Pages

TI

德州仪器

丝印：HB74；Package：TSSOP；SNxAHCT74 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Convert a momentary switch to a toggle switch • Hold a signal duri

文件：2.86873 Mbytes 页数：43 Pages

TI

德州仪器

丝印：HB74；Package：VQFN；SNxAHCT74 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Convert a momentary switch to a toggle switch • Hold a signal duri

文件：2.86873 Mbytes 页数：43 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB74Q；Package：TSSOP；DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Qualified for Automotive Applications Inputs Are TTL-Voltage Compatible EPIC (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) de

文件：529.28 Kbytes 页数：16 Pages

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET

文件：962.14 Kbytes 页数：25 Pages

TI

德州仪器