丝印：HB126；Package：SSOP；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted.

文件：1.90141 Mbytes 页数：31 Pages

TI

德州仪器

丝印：HB126；Package：TVSOP；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted.

文件：1.90141 Mbytes 页数：31 Pages

TI

德州仪器

丝印：HB126；Package：TSSOP；SNx4AHCT126 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • On products compliant to MIL-PRF-38535, All parameters are tested unless otherwise noted.

文件：1.90141 Mbytes 页数：31 Pages

TI

德州仪器

丝印：HB126Q；Package：TSSOP；SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr

文件：1.60308 Mbytes 页数：25 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HB126Q；Package：TSSOP；SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr

文件：1.60308 Mbytes 页数：25 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器