Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting

文件：47.48 Kbytes 页数：4 Pages

RENESAS

瑞萨

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting

文件：47.48 Kbytes 页数：4 Pages

RENESAS

瑞萨

Silicon P Channel Power MOSFET High Speed Power Switching

Renesas

瑞萨

OUTLINE 4 WAY

文件：61.95 Kbytes 页数：1 Pages

IPP

N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：462.78 Kbytes 页数：4 Pages

ISC

无锡固电

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 10 Amperes

文件：38.91 Kbytes 页数：2 Pages

RECTRON

丽正国际