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HABC807-16

GENERAL PURPOSE TRANSISTOR

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

BC807-16

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

TRSYS

Transys Electronics

BC807-16

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain)

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN)

SIEMENS

Siemens Ltd

BC807-16

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817)

TEL

TRANSYS Electronics Limited

BC807-16

PNPGeneralPurposeAmplifier

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC807-16

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

BC807-16

PNPGENERALPURPOSETRANSISTORS

VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC807-16

PNPGeneralPurposeAmplifier

FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BC807-16

GeneralPurposeTransistor

WEITRONWEITRON

威堂電子科技

BC807-16

PNPSiliconAFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC807-16

TRANSISTOR(PNP)

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

BC807-16

PNPGENERALPURPOSETRANSISTORS

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC807-16

PNPPlasticEncapsulateTransistor

FEATURES Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction ComplementarytoBC817(NPNType) MARKING BC807-16:5A; BC807-25:5B; BC807-40:5C

SECOS

SeCoS Halbleitertechnologie GmbH

BC807-16

0.3Walts,PNPPlastic-EncasulateTransistor

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BC807-16

PNPSiliconGeneralPurposeTransistors

Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

MCCMicro Commercial Components

美微科美微科半导体公司

BC807-16

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

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更多HABC807-16供应商 更新时间2024-5-1 19:14:00