丝印：HA8；Package：SOD-123；HIGH VOLTAGE SWITCHING DIODE

文件：182.7 Kbytes 页数：2 Pages

FS

丝印：HA86；Package：SSOP；SNx4AHC86 Quadruple 2-Input Exclusive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V human-body model (A114-A) – 200-V machine model (A115-A) – 1000-V charged-device model (C101) 2 Applications • Detect phase differences in input sign

文件：2.80195 Mbytes 页数：36 Pages

TI1

德州仪器

丝印：HA86；Package：TVSOP；SNx4AHC86 Quadruple 2-Input Exclusive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V human-body model (A114-A) – 200-V machine model (A115-A) – 1000-V charged-device model (C101) 2 Applications • Detect phase differences in input sign

文件：2.80195 Mbytes 页数：36 Pages

TI1

德州仪器

丝印：HA86；Package：TSSOP；SNx4AHC86 Quadruple 2-Input Exclusive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V human-body model (A114-A) – 200-V machine model (A115-A) – 1000-V charged-device model (C101) 2 Applications • Detect phase differences in input sign

文件：2.80195 Mbytes 页数：36 Pages

TI1

德州仪器

丝印：HA86；Package：TSSOP；SNx4AHC86 Quadruple 2-Input Exclusive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V human-body model (A114-A) – 200-V machine model (A115-A) – 1000-V charged-device model (C101) 2 Applications • Detect phase differences in input sign

文件：2.80195 Mbytes 页数：36 Pages

TI1

德州仪器

丝印：HA86；Package：VQFN；SNx4AHC86 Quadruple 2-Input Exclusive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V human-body model (A114-A) – 200-V machine model (A115-A) – 1000-V charged-device model (C101) 2 Applications • Detect phase differences in input sign

文件：2.80195 Mbytes 页数：36 Pages

TI1

德州仪器

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S

文件：36.78 Kbytes 页数：4 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S

文件：36.78 Kbytes 页数：4 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8050

文件：36.87 Kbytes 页数：3 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8050S

文件：39.24 Kbytes 页数：4 Pages

HSMC

华昕