INA310A

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:−40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vt

INA310A

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:−40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vt

INA310A

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vto+120V •Highsignalbandwidth:1.3MHz •Slewrate:2.5V/μs •ExcellentCMRR:160dB •Accuracy –Gainerror(maximum) •VersionA:0.15,10ppm/°Cdrift •VersionB:0.5,20ppm/°

INA310A

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vto+120V •Highsignalbandwidth:1.3MHz •Slewrate:2.5V/μs •ExcellentCMRR:160dB •Accuracy –Gainerror(maximum) •VersionA:0.15,10ppm/°Cdrift •VersionB:0.5,20ppm/°

INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vto+120V •Highsignalbandwidth:1.3MHz •Slewrate:2.5V/μs •ExcellentCMRR:160dB •Accuracy –Gainerror(maximum) •VersionA:0.15,10ppm/°Cdrift •VersionB:0.5,20ppm/°

INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vto+120V •Highsignalbandwidth:1.3MHz •Slewrate:2.5V/μs •ExcellentCMRR:160dB •Accuracy –Gainerror(maximum) •VersionA:0.15,10ppm/°Cdrift •VersionB:0.5,20ppm/°

INA310B

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:−40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vt

INA310B

INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:−40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Widecommon-modevoltage: –Operationalvoltage:−4Vto+110V –Survivalvoltage:−20Vt

IRFD310

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6Ω ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRFD310

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

IRFD310

0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRFD310PBF

HEXFET짰PowerMOSFET

VDSS=400V RDS(on)=3.6Ω ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

IRFE310

HEXFETTRANSISTOR

400Volt,3.6Ω,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRFE310

SimpleDriveRequirements

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRFF310

N-ChannelMOSFETinaHermeticallysealedTO39

IRFF310

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?쏷RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea

IRFF310

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs