丝印：HA00MEP；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree EPIC (Enhanced-Performance Implanted CMOS) Process O

文件：518.559 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HA00MEP；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree EPIC (Enhanced-Performance Implanted CMOS) Process O

文件：518.559 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HA00MEP；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree EPIC (Enhanced-Performance Implanted CMOS) Process O

文件：518.559 Kbytes 页数：15 Pages

TI

德州仪器