IRF460

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

IRF460

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.27ohm,Id=21)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF460

N-ChannelPowerMOSFET

IRF460

RepetitiveAvalancheRatings

IRF460

500V,N-CHANNEL

IRF460

iscN-ChannelMOSFETTransistor

IRF460

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRF460PBF

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?숿RANSISTORSTHRU-HOLE(TO-204AA/AE)

IRFI460

TRANSISTORN-CHANNEL(Vdss=500V,Rds(on)=0.27ohm,Id=21A)

REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFET®TRANSISTOR N-CHANNEL

IRFI460

SimpleDriveRequirements