丝印：H9N；Package：DSBGA；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H9N；Package：DSBGA；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H9N50ANB；Package：TO-263；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H9N50AND；Package：TO-252；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H9N50ANF；Package：TO-220F；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H9N50ANFT；Package：TO-220F；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H9N50ANP；Package：TO-220；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H9N50ANU；Package：TO-251；500V N-Channel Planar MOSFET

Features RDSON=0.59Ω @Vgs=10V, Id=4.5A Low gate Charge(typical 29.4nC) Low Crss (typical 4.2pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：3.09399 Mbytes 页数：12 Pages

SY

顺烨电子