30 ohm, Thin Film, Precision Resistor, 1 %, .25 W, ±100 ppm/°C, Axial-Leaded, Copper Termination, 7.2 x 2.5 mm, Bandoliered, Holsworthy Holco

30 ohm, Thin Film, Precision Resistor, 1 %, .25 W, ±100 ppm/°C, Axial-Leaded, Copper Termination, 7.2 x 2.5 mm, Bandoliered, Holsworthy Holco

TE

泰科

Package：轴向；包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RES 30 OHM 1% 1/4W AXIAL

TE Connectivity Passive Product

Linear Hall Sensors

文件：106.02 Kbytes 页数：1 Pages

TDK

东电化

N-Channel Enhancement Mode Field Effect Transistor

文件：76.28 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant

文件：398.35 Kbytes 页数：6 Pages

Huashan

华汕电子器件