丝印：H7A；Package：SOT-23；Low Cost, High Performance Voltage Feedback, 325 MHz Amplifier

FEATURES Low cost single (AD8057) and dual (AD8058) High speed 325 MHz, −3 dB bandwidth (G = +1) 1000 V/μs slew rate Gain flatness: 0.1 dB to 28 MHz Low noise 7 nV/√Hz Low power 5.4 mA/amplifier typical supply current at 5 V Low distortion −85 dBc at 5 MHz, RL = 1 kΩ Wide supply range from

文件：351.56 Kbytes 页数：16 Pages

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亚德诺

丝印：H7A；Package：SOT-23；Low Cost, High Performance Voltage Feedback, 325 MHz Amplifier

FEATURES Low cost single (AD8057) and dual (AD8058) High speed 325 MHz, −3 dB bandwidth (G = +1) 1000 V/μs slew rate Gain flatness: 0.1 dB to 28 MHz Low noise 7 nV/√Hz Low power 5.4 mA/amplifier typical supply current at 5 V Low distortion −85 dBc at 5 MHz, RL = 1 kΩ Wide supply range from

文件：351.56 Kbytes 页数：16 Pages

AD

亚德诺

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

丝印：H7AQ；Package：U-DFN2020-6；AUTOMOTIVE COMPLIANT WIDE INPUT VOLTAGE RANGE 150mA ULDO REGULATOR

Features - Wide Input Voltage Range: 5V to 60V - Maximum Output Current: 150mA - Dropout Voltage: VDROP = 700mV @IOUT = 100mA (Typ.) VDROP = 1100mV @IOUT = 150mA (Typ.) - Low Quiescent Current: 2μA (Typ.) - High Output Voltage Accuracy: ±2 - High PSRR: 70dB @1kHz - Excellent Line/Load Reg

文件：1.47562 Mbytes 页数：15 Pages

DIODES

美台半导体

丝印：H7AQ；Package：SOT89；AUTOMOTIVE COMPLIANT WIDE INPUT VOLTAGE RANGE 150mA ULDO REGULATOR

Features - Wide Input Voltage Range: 5V to 60V - Maximum Output Current: 150mA - Dropout Voltage: VDROP = 700mV @IOUT = 100mA (Typ.) VDROP = 1100mV @IOUT = 150mA (Typ.) - Low Quiescent Current: 2μA (Typ.) - High Output Voltage Accuracy: ±2 - High PSRR: 70dB @1kHz - Excellent Line/Load Reg

文件：1.47562 Mbytes 页数：15 Pages

DIODES

美台半导体

1G-Bit 3.3V NAND FLASH MEMORY

Offered in 128Mx8bit, the H7A11G21F1CX is a 1G-bit NAND Flash Memory with spare 32M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page an \n• Single-Level Cell (SLC) technology.\n• Automatic Program and Erase– Page Program :(2K + 64) Byte\n• Fast Write Cycle Time– Page Program time : 400us(Typ.)– Block Erase Time : 4.5ms(Typ.)\n• Hardware Data Protection– Program/ Erase Lockout During Power Transitions\n• Unique ID for Copyright Pr;

Axeme

1G-BIT 3.3V SPI-NAND FLASH MEMORY

The H7A41G25B4CG (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The H7A41G25B4CG incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing cod \n• Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Fast Program/Erase performance– More than 100,000 erase/program cycles– More than 10-year data retention\n• Flexible Architecture with 128KB b;

Axeme

128M-BIT 3V SPI-NOR FLASH MEMORY

The H7A5DM26BACT (128M-bit) Serial Flash provides a storage solution for systems with limited space, pins and power. The product offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) an \n• Highest Performance Serial NOR Flash– 104MHz Single, Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– More than 100,000 erase/program cycles– More than 20-year data retention\n• Low Power, Wide Temperature Range – Single 2.7 to 3.6V supply– 4mA a;

Axeme