COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes 页数：5 Pages

UTC

友顺

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：670.72 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

文件：105.13 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt

文件：44.77 Kbytes 页数：2 Pages

ZETEX