首页 >H649T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPEPITAXIALPLANARTRANSISTOR Description TheHI649Aisdesignedforlowfrequencypoweramplifier. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheHJ649Aisdesignedforlowfrequencypoweramplifier. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
GaAsMMIC6-BITDIGITALPHASESHIFTER,3-6GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsMMIC6-BITDIGITALPHASESHIFTER,3-6GHz | Hittite Hittite Microwave Corporation | Hittite | ||
PNPSILICONTRANSISTOR | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
SILICONPNPEPITAXIALPLANARTRANSISTOR Description LowfrequencypoweramplifiercomplementarypairwithHSD669A. AbsoluteMaximumRatings(Ta=25°C) •MaximumTemperatures StorageTemperature............................................................................................-55~+150°C JunctionTempera | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
SILICONPNPEPITAXIALPLANARTRANSISTOR Description Lowfrequencypoweramplifier. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ649isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=–10V,ID=–10A) RDS(on)2=75mΩMAX.(VGS=–4.0V,ID=–10A) •Lowinpu | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
Siliconplanertype(cathodecommon) Siliconplanertype(cathodecommon) Forswitching ■Features ●HighreversevoltageVR ●LowforwardvoltageVF ●Fastreverserecoverytimetrr | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
providesaregulated5Voutputvoltagefroma5.5Vto16.5VsourceEvaluationKit | MaximMaxim Integrated Products 美信美信半导体 | Maxim |
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