首页>H5TQ4G63EFR>规格书详情

H5TQ4G63EFR中文资料DDR3 SDRAM数据手册SK hynix规格书

PDF无图
厂商型号

H5TQ4G63EFR

功能描述

DDR3 SDRAM

制造商

SK hynix Hynix Semiconductor

中文名称

海力士 海力士半导体

数据手册

下载地址下载地址二

更新时间

2025-9-23 9:19:00

人工找货

H5TQ4G63EFR价格和库存,欢迎联系客服免费人工找货

H5TQ4G63EFR规格书详情

描述 Description

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR-xxK and H5TQ4G63EFR-xxK are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

特性 Features

• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM masks write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 and 14 supported
• Programmable additive latency 0, CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9 and 10
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)  - 7.8 μs at 0oC ~ 85 oC  - 3.9 μs at 85oC ~ 95 oC  - 1.95 μs at 85oC ~ 95 oC  Commercial Temperature( 0oC ~ 95 oC)  Industrial Temperature( -40oC ~ 95 oC)  Automotive Temperature( -40oC ~ 105 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch

技术参数

  • 制造商编号

    :H5TQ4G63EFR

  • 生产厂家

    :SK hynix

  • Org.

    :x16

  • Vol

    :1.5V

  • Speed

    :G7/H9/PB/RD/TE

  • Power

    :Normal Power

  • PKG

    :FBGA

  • Product Status

    :Mass production

供应商 型号 品牌 批号 封装 库存 备注 价格
SKHYNIX
23+
N/A
7566
原厂原装
询价
SKHYNIX
2023+
BGA
6893
专注全新正品,优势现货供应
询价
SKHYNIX/海力士
22+
FBGA96
9880
原装正品
询价
N/A
24+
N/A
9548
原厂可订货,技术支持,直接渠道。可签保供合同
询价
SKHYNIX
24+
BGA
8000
新到现货,只做全新原装正品
询价
SKHYNIX
23+
BGA
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
SKHYNIX
23+
BGA
50000
全新原装正品现货,支持订货
询价
SKHYNIX
25+
NA
880000
明嘉莱只做原装正品现货
询价
SKHYNIX
20+
BGA
19570
原装优势主营型号-可开原型号增税票
询价
SKHYNIX
23+
BGA96
400
正规渠道,只有原装!
询价