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H5TQ2G63GFR-PBC

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

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H5TQ2G63GFR-PBI

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-PBJ

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-PBL

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-RDC

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-RDI

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-RDJ

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-RDL

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-TEC

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

H5TQ2G63GFR-TEI

2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant)

FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses

HynixHynix Semiconductor

海力士海力士半导体

详细参数

  • 型号:

    H5TQ2G63BFR

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    2Gb DDR3 SDRAM

供应商型号品牌批号封装库存备注价格
BGA
1129
询价
HYNIX
21+
BGA
12588
原装正品,自己库存 假一罚十
询价
SKHYNIX
13+
/
58
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
HYNIX
24+
BGA
3215
原装优势!绝对公司现货!
询价
HYNIX
11+
BGA
74
询价
HYNIX
BGA
296
正品原装--自家现货-实单可谈
询价
HYNIX
2016+
BGA
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
HynixSemiconductor
24+
96BALLFBGA
6000
进口原装正品假一赔十,货期7-10天
询价
HYNIX
16+
FBGA
8800
进口原装大量现货热卖中
询价
HYNIX
2020+
FBGA
96
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多H5TQ2G63BFR供应商 更新时间2025-7-29 13:00:00