H5TC2G63FFR中文资料DDR3 SDRAM数据手册SK hynix规格书

描述 Description

The H5TC2G63FFR-xxA is a 2Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)
SK hynix 2Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

特性 Features

• VDD=VDDQ=1.35V + 0.100 / - 0.067V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM masks write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 supported
• Programmable additive latency 0, CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle   (Tcase of 0  oC~ 95oC)                          - 7.8 µs at 0oC ~ 85 oC                                                                - 3.9 µs at 85oC ~ 95 oC
• JEDEC standard 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• Write Levelization supported
• 8 bit pre-fetch
• This product in compliance with the RoHS directive.