Trench Gate IGBT

Features : • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：1.82974 Mbytes 页数：8 Pages

HUIXIN

慧芯电子

Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free • AEC-Q101qualified Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：1.82207 Mbytes 页数：8 Pages

HUIXIN

慧芯电子

Control Integrated POwer System

文件：1.23983 Mbytes 页数：17 Pages

INFINEON

英飞凌

Schottky Barrier Diode

文件：1.12003 Mbytes 页数：5 Pages

ROHM

罗姆

Schottky Barrier Diode

文件：730.66 Kbytes 页数：9 Pages

ROHM

罗姆