2N7000

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

2N7000

N-channelenhancementmodeverticalD-MOStransistor

N-channelenhancementmodeverticalD-MOStransistorinaTO-92variantenvelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES 1.LowRDS(on) 2.DirectinterfacetoC-MOS,TTL,etc. 3.High-speedswitching 4.Nosecondarybreakdown.

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor •Powerdissipation350mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

2N7000

N-CHANNEL-ENHANCEMENT

2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical