首页 >H2N5551-C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeamplifierapplications. | DCCOM Dc Components | DCCOM | ||
SmallSignalHighVoltageTransistor(NPN) Features •HighVoltageNPNTransistorforGeneralPurposeand TelephonyApplications | TAITRON TAITRON Components Incorporated | TAITRON | ||
NPNEPITAXIALPLANARTRANSISTOR Description The2N5551isdesignedforamplifiertransistor. Features •ComplementstoPNPType2N5401. •HighCollector-EmitterBreakdownVoltage.VCEO>160V(@IC=1mA) | TGS Tiger Electronic Co.,Ltd | TGS | ||
NPNSiliconTransistor Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage: VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
AmplifierTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-92Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication) Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401 | AUK AUK corp | AUK | ||
NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications. | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | boca | ||
TO-92PACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
AmplifierTransistors Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 | DAYA |
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