丝印：H25R；Package：VSSOP(DCU)；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：936.72 Kbytes 页数：30 Pages

TI

德州仪器

丝印：H25R；Package：VSSOP(DCU)；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：936.72 Kbytes 页数：30 Pages

TI

德州仪器

丝印：H25R；Package：VSSOP；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：936.34 Kbytes 页数：30 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：VSSOP(DCU)；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：936.72 Kbytes 页数：30 Pages

TI

德州仪器