首页 >H2007T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HDSLLINETRANSFORMER | BOTHHAND Bothhand USA | BOTHHAND | ||
HDSLLINETRANSFORMER | BOTHHAND Bothhand USA | BOTHHAND | ||
HighEfficientRectifiers Features ◆Lowcost ◆Diffusedjunction ◆Ultrafastswitchingforhighefficiency ◆Lowreverseleakagecurrent ◆Lowforwardvoltagedrop ◆Highcurrentcapability ◆TheplasticmaterialcarriesULrecognition94V-0 ◆TJis150°C(Max.)andTSTGis175°C(Max.)withPIglue | Good-Ark GOOD-ARK Electronics | Good-Ark |
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