丝印：H150N10HDC；Package：TO-263；100V SGT Single N-Channel MOSFET

Features : • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：610.02 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

文件：115.93 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFET

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

文件：74.01 Kbytes 页数：2 Pages

IXYS

艾赛斯

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JU

文件：157.95 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体