丝印：H13；Package：SOT-363；Digital Transistors (Built-in Resistors)

FEATURES  Two DTC143Z chips in a package  100 mA output current capability  Reduces component count APPLICATIONS  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications

文件：1.44008 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：H13N50ANB；Package：TO-263；500V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 30.9nC) Low Crss (typical 0.78pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A

文件：2.6968 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50ANF；Package：TO-220F；500V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 30.9nC) Low Crss (typical 0.78pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A

文件：2.6968 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50ANP；Package：TO-220；500V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 30.9nC) Low Crss (typical 0.78pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A

文件：2.6968 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50ANV；Package：TO-3P；500V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 30.9nC) Low Crss (typical 0.78pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A

文件：2.6968 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50ANW；Package：TO-247；500V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 30.9nC) Low Crss (typical 0.78pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A

文件：2.6968 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50BNB；Package：TO-263；500V N-Channel Planar MOSFET

Features RDSON=0.38Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 40.1nC) Low Crss (typical 6.6pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：2.89917 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50BNF；Package：TO-220F；500V N-Channel Planar MOSFET

Features RDSON=0.38Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 40.1nC) Low Crss (typical 6.6pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：2.89917 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50BNP；Package：TO-220；500V N-Channel Planar MOSFET

Features RDSON=0.38Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 40.1nC) Low Crss (typical 6.6pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：2.89917 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H13N50BNV；Package：TO-3P；500V N-Channel Planar MOSFET

Features RDSON=0.38Ω @Vgs=10V, Id=6.5A Low gate Charge(typical 40.1nC) Low Crss (typical 6.6pF) Fast switching capability 100 avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：2.89917 Mbytes 页数：12 Pages

SY

顺烨电子