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型号	下载订购	功能描述	制造商上传企业	LOGO
H12NA60	文件：243.04 Kbytes Page：11 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.04 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PJF12NA60	文件：345.06 Kbytes Page：8 Pages	600V N-Channel MOSFET 文件：345.06 Kbytes 页数：8 Pages	PANJIT 強茂	PANJIT
PJP12NA60	文件：345.06 Kbytes Page：8 Pages	600V N-Channel MOSFET 文件：345.06 Kbytes 页数：8 Pages	PANJIT 強茂	PANJIT
STH12NA60	文件：243.04 Kbytes Page：11 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.04 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多H12NA60供应商更新时间2026-1-25 11:18:00