H11G2X中文资料英国安数光数据手册PDF规格书

DESCRIPTION

The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package.

FEATURES

● Options :-

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

● High Isolation Voltage (5.3kVRMS ,7.5kVPK )

● High Current Transfer Ratio ( 1000 min)

● High BVCEO (H11G1 - 100V min.)

● Low collector dark current :-

100nA max. at 80V VCE

● Low input current 1mA IF

APPLICATIONS

● Modems

● Copiers, facsimiles

● Numerical control machines

● Signal transmission between systems of

different potentials and impedances