H11D3M中文资料PDF规格书
H11D3M规格书详情
General Description
The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Features
■ High voltage:
– MOC8204M, BVCER = 400V
– H11D1M, H11D2M, BVCER = 300V
– H11D3M, BVCER = 200V
■ High isolation voltage:
– 7500 VAC peak, 1 second
■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
产品属性
- 型号:
H11D3M
- 功能描述:
晶体管输出光电耦合器 Hi Volt Phototrans
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 输入类型:
DC
- 最大集电极/发射极电压:
70 V
- 最大集电极/发射极饱和电压:
0.4 V
- 绝缘电压:
5300 Vrms
- 电流传递比:
100 % to 200 %
- 最大正向二极管电压:
1.65 V
- 最大输入二极管电流:
60 mA
- 最大集电极电流:
100 mA
- 最大功率耗散:
100 mW
- 最大工作温度:
+ 110 C
- 最小工作温度:
- 55 C
- 封装/箱体:
DIP-4
- 封装:
Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCILD |
22+ |
DIP-6 |
8000 |
原装正品支持实单 |
询价 | ||
FAIRCHILD |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
0N |
DIP6 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
DIP-6.直插 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
onsemi(安森美) |
23+ |
DIP-6 |
31277 |
正规渠道,大量现货,只等你来。 |
询价 | ||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
询价 | ||
onsemi |
22+/23+ |
6-DIP |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON/安森美 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ON/安森美 |
22+ |
SMD |
21000 |
原厂原包装。假一罚十。可开13%增值税发票。 |
询价 |