H11D3中文资料威世科技数据手册PDF规格书

FEATURES

• Very high collector emitter breakdown voltage

BVCEO = 300 V

• Isolation test voltage: 5000 VRMS

• Low coupling capacitance

• High common mode transient immunity

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

AGENCY APPROVALS

• UL1577

• cUL1577

• DIN EN 60747-5-5 (VDE 0884-5) available with option 1

APPLICATIONS

• Telecom

• Industrial controls

• Battery powered equipment

• Office machines

• Programmable controllers

DESCRIPTION

The H11Dx has a GaAs infrared emitting diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling

capacitance, and high isolation voltage.

The coupling device is designed for signal transmission

between two electrically separated circuits.