H11D1S_Q技术资料参数供应代理仙童半导体-114ic电子网

首页 >H11D1S_Q>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
EP11D1ABE	文件：439.76 Kbytes Page：6 Pages	SealedTinyPushbuttonSwitches	CK-COMPONENTS C&K Components	CK-COMPONENTS
H11D1	文件：196.48 Kbytes Page：10 Pages	Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup	VishayVishay Siliconix 威世科技	Vishay
H11D1	文件：196.8 Kbytes Page：9 Pages	PropertyofLite-OnOnly FEATURES Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) Dual-in-linepackage: H11D1:1-channeltype	LITEONLiteon Semiconductor Corporation 敦南科技股份	LITEON
H11D1	文件：282.85 Kbytes Page：6 Pages	6-PinDIPOptoisolatorsHighVoltageTransistorOutput(300Volts) TheH11D1andH11D2consistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsolidstaterelays.	MotorolaMotorola, Inc 摩托罗拉	Motorola
H11D1	文件：382.03 Kbytes Page：8 Pages	HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1	文件：120.43 Kbytes Page：8 Pages	Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage	VishayVishay Siliconix 威世科技	Vishay
H11D1	文件：78.54 Kbytes Page：3 Pages	HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart	ISOCOM Isocom Components 2004 LTD	ISOCOM
H11D1	文件：196.19 Kbytes Page：10 Pages	Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS •	VishayVishay Siliconix 威世科技	Vishay
H11D1M	文件：339.94 Kbytes Page：10 Pages	6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
H11D1M	文件：196.8 Kbytes Page：9 Pages	PropertyofLite-OnOnly FEATURES Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) Dual-in-linepackage: H11D1:1-channeltype	LITEONLiteon Semiconductor Corporation 敦南科技股份	LITEON
H11D1M	文件：228.9 Kbytes Page：9 Pages	HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1M	文件：249.16 Kbytes Page：9 Pages	HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1M	文件：249.16 Kbytes Page：9 Pages	HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1M	文件：249.16 Kbytes Page：9 Pages	HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1S	文件：196.8 Kbytes Page：9 Pages	PropertyofLite-OnOnly FEATURES Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) Dual-in-linepackage: H11D1:1-channeltype	LITEONLiteon Semiconductor Corporation 敦南科技股份	LITEON
H11D1S	文件：382.03 Kbytes Page：8 Pages	HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1SD	文件：382.03 Kbytes Page：8 Pages	HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1SM	文件：249.16 Kbytes Page：9 Pages	HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1SM	文件：339.94 Kbytes Page：10 Pages	6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
H11D1SVM	文件：339.94 Kbytes Page：10 Pages	6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

12 >>>

详细参数

型号：
H11D1S_Q
功能描述：
晶体管输出光电耦合器 SO-6 HV PHOTO TRAN
RoHS：
否
制造商：
Vishay Semiconductors
输入类型：
DC
最大集电极/发射极电压：
70 V
最大集电极/发射极饱和电压：
0.4 V
绝缘电压：
5300 Vrms
电流传递比：
100 % to 200 %
最大正向二极管电压：
1.65 V
最大输入二极管电流：
60 mA
最大集电极电流：
100 mA
最大功率耗散：
100 mW
最大工作温度：
+ 110 C
最小工作温度：
- 55 C
封装/箱体：
DIP-4
封装：
Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	H11D1S2RM		23+	N/A	65210	正品授权货源可靠	询价
深圳市汇莱威科技有限公司	H11D1S2RM		FAIRCHILD	SMD-6	68900	原包原标签100%进口原装常备现货!	询价
贸泽芯城（深圳）电子科技有限公司	H11D1S2RM	FAIRCHILD/仙童	21+ROHS	SMD-6	42110	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市星佑电子有限公司	H11D1SD	FAIRCHILD	05+	原厂原装	4552	只做全新原装真实现货供应	询价
深圳市向鸿伟业电子有限公司	H11D1SD	QTC	1625+	SOP	10000	要原装货就来电话,散新请绕道!	询价
深圳市凯斯宇科技有限公司	H11D1SD	QTC	2022	SOIC-6	2058	原厂原装正品,价格超越代理	询价
深圳市特顺芯科技有限公司	H11D1SD	QTC	00+	SOIC-6	5000		询价
深圳好佳好科技有限公司	H11D1SD	QTC	1305+	SOIC-6	12000	公司特价原装现货	询价
深圳市永贝尔科技有限公司	H11D1SD	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市正迈科技有限公司	H11D1SD	FSC/ON	23+	原包装原封□□	1000	原装进口特价供应QQ1304306553更多详细咨询库存	询价

更多H11D1S_Q供应商更新时间2024-4-29 11:36:00

详细参数

相关规格书

相关库存