BZD27C160P

Marking：H0；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZD27C160P

Marking：H0；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZX585-C15

Marking：H0；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

BZX585-C15

Marking：H0；Package：SOD523；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

BZX84C75

Marking：H0；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

PUMH10

Marking：H0；Package：SOT363；NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1Generaldescription NPN/NPNResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD) plasticpackages. 1.2Featuresandbenefits 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransistorsindigitalapplications Table1.Pr

PUMH10-Q

Marking：H0；Package：TSSOP6；NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/NPNResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Red

PUMH13-Q

Marking：H0；Package：TSSOP6；NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inaSOT363(SC-88)verysmallSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcoun

BZX585-C15

Marking：H0；Package：SOD-523；Voltage regulator diodes

FP6146-15S8G

Marking：H0；Package：TSOT-23-5；300mA Low Noise High PSRR LDO with Shutdown