丝印：GW60H65F；Package：TO-247；60 A, 650 V field stop trench gate IGBT

Features ■ High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 μs short-circuit withstand time ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching

文件：1.51865 Mbytes 页数：14 Pages

STMICROELECTRONICS

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60 A, 650 V field stop trench gate IGBT with very fast diode

文件：1.92588 Mbytes 页数：13 Pages

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Low thermal resistance

文件：1.57984 Mbytes 页数：19 Pages

STMICROELECTRONICS

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Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

STMICROELECTRONICS

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