600V/25A Trench Field Stop IGBT

IGBT Features 600V,25A VCE(sat)(typ.)=2.1V@VGE=15V,IC=25A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA

文件：2.19884 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：236.99 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

文件：197.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Triac

文件：305.82 Kbytes 页数：6 Pages

KODENSHI

可天士